From Fundamental Physics to Device Design
Our theory group explores the fundamental properties and device implications of nanoscale matter. We tackle these problems using a wide variety of theoretical techniques, ranging from ab initio approaches to low-energy effective models, and from nonequilibrium Green's functions to drift-diffusion equations.
- Spin dynamics in semiconductors and metals
- Carrier dynamics in narrow-gap semiconductor superlattices
- Electrovariable nanoplasmonics
- Single-dopant properties in semiconductors
- Novel spintronic devices
- Solid state realizations of quantum computation
- N. J. Harmon and M. E. Flatté, "Spin-flip induced magnetoresistance in positionally disordered organic solids", Physical Review Letters 108, 186602 (2012).
- J. van Bree, A. Yu. Silov, P. M. Koenraad, M. E. Flatté, and C. E. Pryor, "g-factors and diamagnetic coefficients of electrons, holes and excitons in InAs/InP quantum dots", Physical Review B 85, 165323 (2012).
- J.-M. Tang, B. T. Collins, and M. E. Flatté, "Electron spin-phonon interaction symmetries and tunable spin relaxation in silicon and germanium", Physical Review B 85, 045202 (2012).