Flatté Research Group

From Fundamental Physics to Device Design

Flatté Research Group

From Fundamental Physics to Device Design

Flatté Research Group

From Fundamental Physics to Device Design

Flatté Research Group

From Fundamental Physics to Device Design

From Fundamental Physics to Device Design

Our theory group explores the fundamental properties and device implications of nanoscale matter. We tackle these problems using a wide variety of theoretical techniques, ranging from ab initio approaches to low-energy effective models, and from nonequilibrium Green's functions to drift-diffusion equations.

Current Foci

  • Spin dynamics in semiconductors and metals
  • Carrier dynamics in narrow-gap semiconductor superlattices
  • Electrovariable nanoplasmonics
  • Single-dopant properties in semiconductors
  • Novel spintronic devices
  • Solid state realizations of quantum computation

Recent Publications

O ̈. O. Soykal and M. E. Flatté, “Size-dependence of Strong-Coupling Between Nanomagnets and Photonic Cavities”, Physical Review B 82, 104413 (2010). Selected for inclusion in Virtual Journal of Quantum Information,

J. K. Garleff, A. P. Wijnheijmer, A. Yu Silov, J. van Bree, W. Van Roy, J.-M. Tang, M. E. Flatté and P. M. Koenraad, “Enhanced binding energy of manganese acceptors close to the GaAs(110) surface”, Physical Review B 82, 035303 (2010).

D. H. Berman and M. E. Flatté, “Electron beam formation from spin-orbit inter- actions in zincblende semiconductor quantum wells”, Physical Review Letters 105, 157202 (2010).